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2 article(s) from Yang, Wanli

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

Jako S. Eensalu,
Atanas Katerski,
Erki Kärber,
Lothar Weinhardt,
Monika Blum,
Clemens Heske,
Wanli Yang,
Ilona Oja Acik and
Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

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Figure 1: Surface views, by scanning electron microscopy (SEM) of 70 nm (a) and 100 nm (b) thick annealed Sb₂S...

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Figure 2: S L_2,3 XES spectra of two Sb₂S₃ films, as-deposited (“as-dep.”, blue) and after post-deposition tre...

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Figure 3: (a) Effect of Sb₂S₃ absorber thickness on J–V curves at AM1.5G. (b) EQE of solar cells and transmit...

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Figure 4: SEM cross-section of the best-performing 5.5% PCE solar cell (100 nm Sb₂S₃) and the corresponding d...

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Figure 5: Photoconversion parameters of 100 nm Sb₂S₃ solar cells under illumination at AM1.5G as a function o...

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Figure 6: Photoconversion parameters of (≈100 nm Sb₂S₃) solar cells at AM1.5G as a function of storage time. ...

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Figure 7: Photoconversion parameters of 100 nm Sb₂S₃ solar cells without aging (black dots) or after 180 days...

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Full Research Paper

Published 06 Dec 2019

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Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

Wanli Yang,
Shuaiqi Fan,
Yuxing Liang and
Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

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Figure 1: Three configurations of a piezoelectric p–n junction: 1) R-C stands for the piezoelectric p–n junct...

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Figure 2: Quasi-electrostatic analysis of a mechanically loaded piezoelectric p–n junction under a bias volta...

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Figure 3: Comparison of I–V characteristics obtained from our model and the Shockley model under (a) forward-...

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Figure 4: (a) I–V characteristics of a piezoelectric p–n junction under different loadings; (b) NEMC distribu...

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Figure 5: (a) Current density as a function of applied tensile stress under two constant forward-bias voltage...

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Figure 6: (a) I–V characteristics of a piezoelectric p–n junction under reverse-bias voltages and different a...

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Figure 7: Positive current density under a reverse-bias voltage. (a) Current density under different applied ...

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Figure 8: I–V characteristics for different loading locations under constant applied stress: (a) σ = −10 MPa;...

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Figure 9: I–V characteristics of a CdS p–n junction with different doping concentrations exposed to mechanica...

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Full Research Paper

Published 06 Sep 2019

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Semitransparent Sb2S3 thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows